Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
Date
2011
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved
x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P
sublattices show sharp termination on the interface. The In sublattice is continuous across the
interface. The study has shown the depletion of the Al concentration at the interface; at the last
atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero.
A monolayer of InAs at the interface is consistent with substitution of As for P at the surface
preceding growth.
Description
Final published version
Keywords
Citation
Klenov, D. O., & Zide, J. M. O. (2011). Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy. Applied Physics Letters, 99(14) doi:10.1063/1.3645632