Browsing by Author "Zhong, Y."
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Item Contactless electroreflectance study of E0 and E0+ΔSO transitions in In0.53Ga0.47BiXAs1-X alloys(American Institute of Physics, 2011) Kudrawiec, R.; Kopaczek, J.; Misiewicz, J.; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O.; R. Kudrawiec, J. Kopaczek, J. Misiewicz, J. P. Petropoulos, Y. Zhong, and J. M. O. Zide; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O. (orcid.org/0000-0002-6378-7221)Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.Item Effects of molecular beam epitaxial growth conditions on composition and optical properties of InGaBiAs(American Institute of Physics, 2012) Zhong, Y.; Dongmo, P. B.; Petropoulos, J. P.; Zide, J. M. O.; Y. Zhong, P. B. Dongmo, J. P. Petropoulos, and J. M. O. Zide; Zhong, Y.; Dongmo, P. B.; Petropoulos, J. P.; Zide, J. M. O.(orcid.org/0000-0002-6378-7221)We describe the growth conditions of InxGa1 xBiyAs1 y (lattice-mismatched and matched) on InP substrates by molecular beam epitaxy and the resulting properties. Due to their anomalously narrow bandgaps and the presence of bismuth, these materials are promising for optoelectronics and thermoelectrics. Low growth temperature and moderate As/Bi beam equivalent pressure ratios are beneficial for Bi incorporation, in good qualitative agreement with GaBiyAs1 y on GaAs. Up to 6.75% bismuth is incorporated. High resolution x-ray diffraction and reciprocal space mapping show that InxGa1 xBiyAs1 y samples exhibit good crystalline quality and zero relaxation. The band gap is reduced in agreement with theoretical predictions. Lattice-matched samples have been produced with lattice mismatch 0.21%.Item Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material(American Institute of Physics, 2011) Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O.; Petropoulos, J. P., Zhong, Y., Zide, J. M. O.; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O. (orcid.org/0000-0002-6378-7221)In0.53Ga0.47BixAs1 x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x¼3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing InyGa1 yBixAs1 x lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 lm.