Browsing by Author "Zide, J. M. O. (orcid.org/0000-0002-6378-7221)"
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Item Contactless electroreflectance study of E0 and E0+ΔSO transitions in In0.53Ga0.47BiXAs1-X alloys(American Institute of Physics, 2011) Kudrawiec, R.; Kopaczek, J.; Misiewicz, J.; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O.; R. Kudrawiec, J. Kopaczek, J. Misiewicz, J. P. Petropoulos, Y. Zhong, and J. M. O. Zide; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O. (orcid.org/0000-0002-6378-7221)Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.Item Optical and electrical characterization of InGaBiAs for use as a new mid-infrared optoelectronic material(American Institute of Physics, 2011) Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O.; Petropoulos, J. P., Zhong, Y., Zide, J. M. O.; Petropoulos, J. P.; Zhong, Y.; Zide, J. M. O. (orcid.org/0000-0002-6378-7221)In0.53Ga0.47BixAs1 x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x¼3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing InyGa1 yBixAs1 x lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 lm.Item Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy(American Institute of Physics, 2011) Klenov, D. O.; Zide, J. M. O.; Klenov, D. O., Zide, J. M. O.; Zide, J. M. O. (orcid.org/0000-0002-6378-7221)The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.