Contactless electroreflectance study of E0 and E0+ΔSO transitions in In0.53Ga0.47BiXAs1-X alloys
Date
2011
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.
Description
Final published version
Keywords
Citation
Kudrawiec, R., Kopaczek, J., Misiewicz, J., Petropoulos, J. P., Zhong, Y., & Zide, J. M. O. (2011). Contactless electroreflectance study of E-0 and E-0 + delta(SO) transitions in In0.53Ga0.47BixAs1-x alloys. Applied Physics Letters, 99(25), 251906.