Defects as qubits in 3C- and 4H-SiC
| Author(s) | Gordon, L. | |
| Author(s) | Janotti, Anderson | |
| Author(s) | Van de Walle, Chris G. | |
| Ordered Author | L. Gordon, A. Janotti, and C. G. Van de Walle | |
| UD Author | Janotti, Anderson | en_US |
| Date Accessioned | 2016-06-22T19:54:19Z | |
| Date Available | 2016-06-22T19:54:19Z | |
| Copyright Date | Copyright ©2015 American Physical Society | en_US |
| Publication Date | 2015-07-20 | |
| Description | Publisher's PDF | en_US |
| Abstract | We employ hybrid density functional calculations to search for defects in different polytypes of SiC that may serve as qubits for quantum computing. We explore the divacancy in 4H- and 3C-SiC, consisting of a carbon vacancy adjacent to a silicon vacancy, and the nitrogen-vacancy (NV) center in 3C-SiC, in which the substitutional NC sits next to a Si vacancy (NC-VSi). The calculated excitation and emission energies of the divacancy in 4H-SiC are in excellent agreement with experimental data, and aid in identifying the four unique configurations of the divacancy with the four distinct zero-phonon lines observed experimentally. For 3C-SiC, we identify the paramagnetic defect that was recently shown to maintain a coherent quantum state up to room temperature as the spin-1 neutral divacancy. Finally, we show that the (NC-VSi)− center in 3C-SiC is highly promising for quantum information science, and we provide guidance for identifying this defect. | en_US |
| Department | University of Delaware. Department of Materials Science and Engineering. | en_US |
| Citation | Gordon, L., A. Janotti, and C. G. Van de Walle. "Defects as qubits in 3 C− and 4 H− SiC." Physical Review B 92.4 (2015): 045208. | en_US |
| DOI | 10.1103/PhysRevB.92.045208 | en_US |
| ISSN | 2469-9950 ; e- 2469-9969 | en_US |
| URL | http://udspace.udel.edu/handle/19716/17811 | |
| Language | en_US | en_US |
| Publisher | American Physical Society | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | PHYSICAL REVIEW B | en_US |
| dc.source.uri | http://journals.aps.org/prb/ | en_US |
| Title | Defects as qubits in 3C- and 4H-SiC | en_US |
| Type | Article | en_US |
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