Simulation and comparison of high speed GaAsSb-InP and InGaAs-InP uni-traveling-carrier photodiodes
| Author(s) | Guneroglu, Ugur | |
| Date Accessioned | 2019-07-19T14:55:00Z | |
| Date Available | 2019-07-19T14:55:00Z | |
| Publication Date | 2019 | |
| SWORD Update | 2019-03-19T16:06:44Z | |
| Abstract | In this thesis, the performance of GaAsSb/InP and InGaAs/InP UTC-PD’s are investigated by performing both optical and electrical simulations in Lumerical FDTD and Device software. Absorption material GaAsSb is replaced with InGaAs for the same reference structure. Voltage-current relation, responsivity as well as frequency response are obtained from the steady-state and transient simulations that are done for optical communication wavelengths which are 1.3 μm and 1.55 μm. Also, the systematics behind the simulation flow are presented. | en_US |
| Advisor | Zeng, Yuping | |
| Degree | M.S. | |
| Department | University of Delaware, Department of Electrical and Computer Engineering | |
| Unique Identifier | 1109726170 | |
| URL | http://udspace.udel.edu/handle/19716/24265 | |
| Language | en | |
| Publisher | University of Delaware | en_US |
| URI | https://search.proquest.com/docview/2201417254?accountid=10457 | |
| Title | Simulation and comparison of high speed GaAsSb-InP and InGaAs-InP uni-traveling-carrier photodiodes | en_US |
| Type | Thesis | en_US |