Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)
Date
2023-08-24
Journal Title
Journal ISSN
Volume Title
Publisher
Journal of Physical Chemistry C
Abstract
We investigate the adsorption and thermal decomposition of triphenyl bismuth (TPB) on the silicon (001) surface using atomic-resolution scanning tunneling microscopy, synchrotron-based X-ray photoelectron spectroscopy, and density functional theory calculations. Our results show that the adsorption of TPB at room temperature creates both bismuth–silicon and phenyl–silicon bonds. Annealing above room temperature leads to increased chemical interactions between the phenyl groups and the silicon surface, followed by phenyl detachment and bismuth subsurface migration. The thermal decomposition of the carbon fragments leads to the formation of silicon carbide at the surface. This chemical understanding of the process allows for controlled bismuth introduction into the near surface of silicon and opens pathways for ultra-shallow doping approaches.
Description
This article was originally published in Journal of Physical Chemistry C. The version of record is available at: https://doi.org/10.1021/acs.jpcc.3c03916. Copyright © 2023 American Chemical Society
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Citation
Lundgren, Eric A. S., Carly Byron, Procopios Constantinou, Taylor J. Z. Stock, Neil J. Curson, Lars Thomsen, Oliver Warschkow, Andrew V. Teplyakov, and Steven R. Schofield. “Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001).” The Journal of Physical Chemistry C 127, no. 33 (August 24, 2023): 16433–41. https://doi.org/10.1021/acs.jpcc.3c03916.