Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
Author(s) | Klenov, D. O. | |
Author(s) | Zide, J. M. O. | |
Ordered Author | Klenov, D. O., Zide, J. M. O. | |
UD Author | Zide, J. M. O. (orcid.org/0000-0002-6378-7221) | |
Date Accessioned | 2014-08-26T01:48:09Z | |
Date Available | 2014-08-26T01:48:09Z | |
Copyright Date | Copyright © 2011 American Institute of Physics | |
Publication Date | 2011 | |
Description | Final published version | en_US |
Abstract | The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth. | en_US |
Department | University of Delaware. Department of Materials Science and Engineering. | |
Citation | Klenov, D. O., & Zide, J. M. O. (2011). Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy. Applied Physics Letters, 99(14) doi:10.1063/1.3645632 | |
DOI | http://dx.doi.org/10.1063/1.3645632 | |
ISSN | 0003-6951 | |
URL | http://udspace.udel.edu/handle/19716/13123 | |
dc.language | English (United States) | |
Publisher | American Institute of Physics | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | |
dc.source | Applied Physics Letters | |
dc.source.uri | http://scitation.aip.org/content/aip/journal/apl/browse | |
Title | Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy | en_US |
Type | Article | en_US |